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ZXMN2B03E6
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V (BR)DSS
20
V
I D = 250 A, V GS =0V
Zero gate voltage drain current
Gate-body leakage
I DSS
I GSS
1
100
A
nA
V DS = 20V, V GS =0V
V GS =±8V, V DS =0V
Gate-source threshold voltage
Static drain-source on-state
V GS(th)
R DS(on)
0.4
1.0
0.040
V
I D = 250 A, V DS =V GS
V GS = 4.5V, I D = 4.3A
resistance (*)
0.055
0.075
V GS = 2.5V, I D = 3.7A
V GS = 1.8V, I D = 3.2A
Forward transconductance (*) (?)
g fs
13.5
S
V DS = 10V, I D = 4.3A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1160
210
136
pF
pF
pF
V DS = 10V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
4.2
6.2
33.9
12.4
14.5
2
2.8
ns
ns
ns
ns
nC
nC
nC
V DD = 10V, V GS = 4.5V
I D = 1A
R G ≈ 6.0
V DS = 10V, V GS = 4.5V
I D = 4.3A
Source-drain diode
Diode forward voltage (*)
V SD
0.67
0.95
V
T j =25°C, I S = 1.8A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
10.8
3.4
ns
nC
T j =25°C, I F = 2.8A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 1 - September 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
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